STMicroelectronics - STGD6NC60H-1

KEY Part #: K6423198

STGD6NC60H-1 Pricing (USD) [62346PC Stock]

  • 1 pcs$0.59370
  • 10 pcs$0.53099
  • 100 pcs$0.41400
  • 500 pcs$0.32350
  • 1,000 pcs$0.25539

Nimewo Pati:
STGD6NC60H-1
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT N-CH 600V 7A IPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGD6NC60H-1 electronic components. STGD6NC60H-1 can be shipped within 24 hours after order. If you have any demands for STGD6NC60H-1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGD6NC60H-1 Atribi pwodwi yo

Nimewo Pati : STGD6NC60H-1
Manifakti : STMicroelectronics
Deskripsyon : IGBT N-CH 600V 7A IPAK
Seri : PowerMESH™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 15A
Kouran - Pèseptè batman (Icm) : 21A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 3A
Pouvwa - Max : 62.5W
Oblije chanje enèji : 20µJ (on), 68µJ (off)
Kalite Antre : Standard
Gate chaje : 13.6nC
Td (on / off) @ 25 ° C : 12ns/76ns
Kondisyon egzamen an : 390V, 3A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA
Pake Aparèy Founisè : IPAK (TO-251)