DMNH6012SPSQ-13 Pricing (USD) [120780PC Stock]
- 1 pcs$0.30624
- 2,500 pcs$0.27104
- Nimewo Pati:
- DMNH6012SPSQ-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET NCH 60V 50A POWERDI.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - RF and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMNH6012SPSQ-13 electronic components. DMNH6012SPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMNH6012SPSQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMNH6012SPSQ-13 Atribi pwodwi yo
Nimewo Pati :
DMNH6012SPSQ-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET NCH 60V 50A POWERDI
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
11 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1926pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI5060-8
Pake / Ka :
8-PowerTDFN
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