Infineon Technologies - IRL2203NL

KEY Part #: K6414572

[12709PC Stock]


    Nimewo Pati:
    IRL2203NL
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 30V 116A TO-262.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRL2203NL electronic components. IRL2203NL can be shipped within 24 hours after order. If you have any demands for IRL2203NL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRL2203NL Atribi pwodwi yo

    Nimewo Pati : IRL2203NL
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 30V 116A TO-262
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 116A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 7 mOhm @ 60A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 4.5V
    Vgs (Max) : ±16V
    Antre kapasite (Ciss) (Max) @ Vds : 3290pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 3.8W (Ta), 180W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-262
    Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA