IXXR110N65B4H1 Pricing (USD) [8475PC Stock]
- 1 pcs$5.11938
- 30 pcs$5.09391
- Nimewo Pati:
- IXXR110N65B4H1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 650V 150A 455W ISOPLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXXR110N65B4H1 electronic components. IXXR110N65B4H1 can be shipped within 24 hours after order. If you have any demands for IXXR110N65B4H1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXXR110N65B4H1 Atribi pwodwi yo
Nimewo Pati :
IXXR110N65B4H1
Manifakti :
IXYS
Deskripsyon :
IGBT 650V 150A 455W ISOPLUS247
Seri :
GenX4™, XPT™
Estati Pati :
Active
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
150A
Kouran - Pèseptè batman (Icm) :
460A
Vce (sou) (Max) @ Vge, Ic :
2.2V @ 15V, 110A
Pouvwa - Max :
455W
Oblije chanje enèji :
2.2mJ (on), 1.05mJ (off)
Kalite Antre :
Standard
Gate chaje :
183nC
Td (on / off) @ 25 ° C :
38ns/156ns
Kondisyon egzamen an :
400V, 55A, 2 Ohm, 15V
Ranvèse Tan Reverse (trr) :
100ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
ISOPLUS247™
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