Nexperia USA Inc. - PMPB100XPEAX

KEY Part #: K6401230

PMPB100XPEAX Pricing (USD) [3122PC Stock]

  • 3,000 pcs$0.06743

Nimewo Pati:
PMPB100XPEAX
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET P-CH 20V 3.2A 6DFN2020MD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PMPB100XPEAX electronic components. PMPB100XPEAX can be shipped within 24 hours after order. If you have any demands for PMPB100XPEAX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMPB100XPEAX Atribi pwodwi yo

Nimewo Pati : PMPB100XPEAX
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET P-CH 20V 3.2A 6DFN2020MD
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 3V, 4.5V
RD sou (Max) @ Id, Vgs : 122 mOhm @ 3.2A, 4.5V
Vgs (th) (Max) @ Id : 1.25V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5nC @ 4.5V
Vgs (Max) : +8V, -10V
Antre kapasite (Ciss) (Max) @ Vds : 388pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 550mW (Ta)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-DFN2020MD (2x2)
Pake / Ka : 6-UDFN Exposed Pad