IXTH180N10T Pricing (USD) [20736PC Stock]
- 1 pcs$2.18587
- 10 pcs$1.95142
- 100 pcs$1.60001
- 500 pcs$1.29560
- 1,000 pcs$1.03664
- Nimewo Pati:
- IXTH180N10T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 100V 180A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTH180N10T electronic components. IXTH180N10T can be shipped within 24 hours after order. If you have any demands for IXTH180N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH180N10T Atribi pwodwi yo
Nimewo Pati :
IXTH180N10T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 100V 180A TO-247
Seri :
TrenchMV™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
151nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
6900pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
480W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247 (IXTH)
Pake / Ka :
TO-247-3
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