IXYS - IXBT20N360HV

KEY Part #: K6422593

IXBT20N360HV Pricing (USD) [2341PC Stock]

  • 1 pcs$19.37521
  • 10 pcs$17.92276
  • 25 pcs$16.46976
  • 100 pcs$15.30715

Nimewo Pati:
IXBT20N360HV
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 3600V 70A TO-268HV.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in IXYS IXBT20N360HV electronic components. IXBT20N360HV can be shipped within 24 hours after order. If you have any demands for IXBT20N360HV, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXBT20N360HV Atribi pwodwi yo

Nimewo Pati : IXBT20N360HV
Manifakti : IXYS
Deskripsyon : IGBT 3600V 70A TO-268HV
Seri : BIMOSFET™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 3600V
Kouran - Pèseptè (Ic) (Max) : 70A
Kouran - Pèseptè batman (Icm) : 220A
Vce (sou) (Max) @ Vge, Ic : 3.4V @ 15V, 20A
Pouvwa - Max : 430W
Oblije chanje enèji : 15.5mJ (on), 4.3mJ (off)
Kalite Antre : Standard
Gate chaje : 110nC
Td (on / off) @ 25 ° C : 18ns/238ns
Kondisyon egzamen an : 1500V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 1.7µs
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè : TO-268

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