[12758PC Stock]
- Nimewo Pati:
- IRF830L
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 500V 4.5A TO-262.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - Objektif espesyal and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRF830L electronic components. IRF830L can be shipped within 24 hours after order. If you have any demands for IRF830L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF830L Atribi pwodwi yo
Nimewo Pati :
IRF830L
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 500V 4.5A TO-262
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.5 Ohm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
610pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 74W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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