Vishay Siliconix - IRFD320

KEY Part #: K6414889

[12599PC Stock]


    Nimewo Pati:
    IRFD320
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 400V 490MA 4-DIP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRFD320 electronic components. IRFD320 can be shipped within 24 hours after order. If you have any demands for IRFD320, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFD320 Atribi pwodwi yo

    Nimewo Pati : IRFD320
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 400V 490MA 4-DIP
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 400V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 490mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 1.8 Ohm @ 210mA, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 410pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP
    Pake / Ka : 4-DIP (0.300", 7.62mm)

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