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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTP5860NG

ON Semiconductor - NTP5860NG

KEY Part #: K6397462

NTP5860NG Pricing (USD) [26417PC Stock]

  • 1 pcs$1.56008
  • 400 pcs$0.76161
Nimewo Pati:
NTP5860NG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 60V 220A TO-220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTP5860NG electronic components. NTP5860NG can be shipped within 24 hours after order. If you have any demands for NTP5860NG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTP5860NG Atribi pwodwi yo

Nimewo Pati : NTP5860NG
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 60V 220A TO-220-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 220A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 10760pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 283W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3

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