[9326PC Stock]
- Nimewo Pati:
- STGD3NB60HDT4
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 600V 10A 50W DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGD3NB60HDT4 electronic components. STGD3NB60HDT4 can be shipped within 24 hours after order. If you have any demands for STGD3NB60HDT4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGD3NB60HDT4 Atribi pwodwi yo
Nimewo Pati :
STGD3NB60HDT4
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 600V 10A 50W DPAK
Seri :
PowerMESH™
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
10A
Kouran - Pèseptè batman (Icm) :
24A
Vce (sou) (Max) @ Vge, Ic :
2.8V @ 15V, 3A
Pouvwa - Max :
50W
Oblije chanje enèji :
33µJ (off)
Kalite Antre :
Standard
Gate chaje :
21nC
Td (on / off) @ 25 ° C :
5ns/53ns
Kondisyon egzamen an :
480V, 3A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
95ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
DPAK
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