Infineon Technologies - BUZ32 H

KEY Part #: K6398072

BUZ32 H Pricing (USD) [52540PC Stock]

  • 1 pcs$0.74422
  • 10 pcs$0.67147
  • 100 pcs$0.53943

Nimewo Pati:
BUZ32 H
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 200V 9.5A TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Infineon Technologies BUZ32 H electronic components. BUZ32 H can be shipped within 24 hours after order. If you have any demands for BUZ32 H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BUZ32 H Atribi pwodwi yo

Nimewo Pati : BUZ32 H
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 200V 9.5A TO220-3
Seri : SIPMOS®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 400 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 530pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 75W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3
Pake / Ka : TO-220-3

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