R8010ANX Pricing (USD) [29315PC Stock]
- 1 pcs$1.54686
- 10 pcs$1.38159
- 100 pcs$1.07481
- 500 pcs$0.87033
- 1,000 pcs$0.73402
- Nimewo Pati:
- R8010ANX
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 800V 10A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor R8010ANX electronic components. R8010ANX can be shipped within 24 hours after order. If you have any demands for R8010ANX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R8010ANX Atribi pwodwi yo
Nimewo Pati :
R8010ANX
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 800V 10A TO220
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
560 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
62nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1750pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
40W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220FM
Pake / Ka :
TO-220-3 Full Pack
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