Infineon Technologies - IRLR014NTRPBF

KEY Part #: K6408013

[775PC Stock]


    Nimewo Pati:
    IRLR014NTRPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 55V 10A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Modil yo ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRLR014NTRPBF electronic components. IRLR014NTRPBF can be shipped within 24 hours after order. If you have any demands for IRLR014NTRPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRLR014NTRPBF Atribi pwodwi yo

    Nimewo Pati : IRLR014NTRPBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 55V 10A DPAK
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 55V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 140 mOhm @ 6A, 10V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 7.9nC @ 5V
    Vgs (Max) : ±16V
    Antre kapasite (Ciss) (Max) @ Vds : 265pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 28W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D-Pak
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63