RFN2LAM6STR Pricing (USD) [493751PC Stock]
- 1 pcs$0.08281
- 3,000 pcs$0.08240
- 6,000 pcs$0.07709
- 15,000 pcs$0.07177
- Nimewo Pati:
- RFN2LAM6STR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- DIODE GEN PURP 600V 1.5A PMDTM. Diodes - General Purpose, Power, Switching 600V Vr 1.5A Io Fast Recovery Diode
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RFN2LAM6STR electronic components. RFN2LAM6STR can be shipped within 24 hours after order. If you have any demands for RFN2LAM6STR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RFN2LAM6STR Atribi pwodwi yo
Nimewo Pati :
RFN2LAM6STR
Manifakti :
Rohm Semiconductor
Deskripsyon :
DIODE GEN PURP 600V 1.5A PMDTM
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
1.5A
Voltage - Forward (Vf) (Max) @ Si :
1.55V @ 1.5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
35ns
Kouran - Fèy Reverse @ Vr :
1µA @ 600V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
SOD-128
Pake Aparèy Founisè :
PMDTM
Operating Tanperati - Junction :
150°C (Max)
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