Diodes Incorporated - ZVNL120CSTOA

KEY Part #: K6411119

[13901PC Stock]


    Nimewo Pati:
    ZVNL120CSTOA
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET N-CH 200V 0.18A TO92-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated ZVNL120CSTOA electronic components. ZVNL120CSTOA can be shipped within 24 hours after order. If you have any demands for ZVNL120CSTOA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZVNL120CSTOA Atribi pwodwi yo

    Nimewo Pati : ZVNL120CSTOA
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET N-CH 200V 0.18A TO92-3
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 3V, 5V
    RD sou (Max) @ Id, Vgs : 10 Ohm @ 250mA, 5V
    Vgs (th) (Max) @ Id : 1.5V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 85pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 700mW (Ta)
    Operating Tanperati : -
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : E-Line (TO-92 compatible)
    Pake / Ka : E-Line-3