[2206PC Stock]
- Nimewo Pati:
- IRFHM4226TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N CH 25V 28A PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFHM4226TRPBF electronic components. IRFHM4226TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM4226TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM4226TRPBF Atribi pwodwi yo
Nimewo Pati :
IRFHM4226TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N CH 25V 28A PQFN
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
28A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2000pF @ 13V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.7W (Ta), 39W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
-
Pake / Ka :
8-TQFN Exposed Pad
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