STP13N65M2 Pricing (USD) [47714PC Stock]
- 1 pcs$0.81948
- 10 pcs$0.74171
- 100 pcs$0.59604
- 500 pcs$0.46359
- 1,000 pcs$0.38412
- Nimewo Pati:
- STP13N65M2
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 650V 10A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STP13N65M2 electronic components. STP13N65M2 can be shipped within 24 hours after order. If you have any demands for STP13N65M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP13N65M2 Atribi pwodwi yo
Nimewo Pati :
STP13N65M2
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 650V 10A TO220
Seri :
MDmesh™ M2
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
430 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
590pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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