[3243PC Stock]
- Nimewo Pati:
- IXTM50N20
- Manifakti:
- IXYS
- Detaye deskripsyon:
- POWER MOSFET TO-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tiristors - SCR, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Bridge rèktifikateur and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTM50N20 electronic components. IXTM50N20 can be shipped within 24 hours after order. If you have any demands for IXTM50N20, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTM50N20 Atribi pwodwi yo
Nimewo Pati :
IXTM50N20
Manifakti :
IXYS
Deskripsyon :
POWER MOSFET TO-3
Seri :
GigaMOS™
Estati Pati :
Last Time Buy
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-204AE
Pake / Ka :
TO-204AE
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