UH10JT-E3/4W Pricing (USD) [2061PC Stock]
- 1,000 pcs$0.27408
- Nimewo Pati:
- UH10JT-E3/4W
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 600V 10A TO220AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division UH10JT-E3/4W electronic components. UH10JT-E3/4W can be shipped within 24 hours after order. If you have any demands for UH10JT-E3/4W, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UH10JT-E3/4W Atribi pwodwi yo
Nimewo Pati :
UH10JT-E3/4W
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 10A TO220AC
Seri :
-
Estati Pati :
Obsolete
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
-
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
-
Kapasite @ Vr, F :
-
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2
Pake Aparèy Founisè :
TO-220AC
Operating Tanperati - Junction :
-55°C ~ 175°C
Dènye nouvèl
Ou ka enterese tou
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IDB15E60
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO263. Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode
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