Manifakti :
Texas Instruments
Deskripsyon :
MOSFET 20V 1.5A DMOS 24-DW
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.5A
RD sou (Max) @ Id, Vgs :
300 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
2.1nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
98pF @ 14V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
24-SOIC (0.295", 7.50mm Width)
Pake Aparèy Founisè :
24-SOIC