PHN210T,118 Pricing (USD) [3704PC Stock]
- 2,500 pcs$0.10396
- Nimewo Pati:
- PHN210T,118
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PHN210T,118 electronic components. PHN210T,118 can be shipped within 24 hours after order. If you have any demands for PHN210T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHN210T,118 Atribi pwodwi yo
Nimewo Pati :
PHN210T,118
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2N-CH 30V 8SOIC
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
RD sou (Max) @ Id, Vgs :
100 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
2.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
250pF @ 20V
Pouvwa - Max :
2W
Operating Tanperati :
-65°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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