Taiwan Semiconductor Corporation - TSP10H200S S1G

KEY Part #: K6453340

TSP10H200S S1G Pricing (USD) [351478PC Stock]

  • 1 pcs$0.10523

Nimewo Pati:
TSP10H200S S1G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE SCHOTTKY 200V 10A TO277A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSP10H200S S1G Atribi pwodwi yo

Nimewo Pati : TSP10H200S S1G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE SCHOTTKY 200V 10A TO277A
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 910mV @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 100µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-277, 3-PowerDFN
Pake Aparèy Founisè : TO-277A (SMPC)
Operating Tanperati - Junction : -55°C ~ 150°C

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