TSP10H200S S1G Pricing (USD) [351478PC Stock]
- 1 pcs$0.10523
- Nimewo Pati:
- TSP10H200S S1G
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- DIODE SCHOTTKY 200V 10A TO277A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSP10H200S S1G electronic components. TSP10H200S S1G can be shipped within 24 hours after order. If you have any demands for TSP10H200S S1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSP10H200S S1G Atribi pwodwi yo
Nimewo Pati :
TSP10H200S S1G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE SCHOTTKY 200V 10A TO277A
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
910mV @ 10A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
100µA @ 200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-277, 3-PowerDFN
Pake Aparèy Founisè :
TO-277A (SMPC)
Operating Tanperati - Junction :
-55°C ~ 150°C
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