Nimewo Pati :
CMH05A(TE12L,Q,M)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
DIODE GEN PURP 400V 1A MFLAT
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
35ns
Kouran - Fèy Reverse @ Vr :
10µA @ 400V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
M-FLAT (2.4x3.8)
Operating Tanperati - Junction :
-40°C ~ 150°C