STMicroelectronics - STGWA30N120KD

KEY Part #: K6421868

STGWA30N120KD Pricing (USD) [32518PC Stock]

  • 1 pcs$1.27377
  • 600 pcs$1.26743

Nimewo Pati:
STGWA30N120KD
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 1200V 60A 220W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGWA30N120KD electronic components. STGWA30N120KD can be shipped within 24 hours after order. If you have any demands for STGWA30N120KD, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGWA30N120KD Atribi pwodwi yo

Nimewo Pati : STGWA30N120KD
Manifakti : STMicroelectronics
Deskripsyon : IGBT 1200V 60A 220W TO247
Seri : PowerMESH™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 60A
Kouran - Pèseptè batman (Icm) : 100A
Vce (sou) (Max) @ Vge, Ic : 3.85V @ 15V, 20A
Pouvwa - Max : 220W
Oblije chanje enèji : 2.4mJ (on), 4.3mJ (off)
Kalite Antre : Standard
Gate chaje : 105nC
Td (on / off) @ 25 ° C : 36ns/251ns
Kondisyon egzamen an : 960V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 84ns
Operating Tanperati : -55°C ~ 125°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247