Infineon Technologies - IPP030N10N3GXKSA1

KEY Part #: K6416352

IPP030N10N3GXKSA1 Pricing (USD) [14062PC Stock]

  • 1 pcs$2.53402
  • 10 pcs$2.26123
  • 100 pcs$1.85411
  • 500 pcs$1.50136
  • 1,000 pcs$1.26621

Nimewo Pati:
IPP030N10N3GXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 100A TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPP030N10N3GXKSA1 electronic components. IPP030N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP030N10N3GXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP030N10N3GXKSA1 Atribi pwodwi yo

Nimewo Pati : IPP030N10N3GXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 100A TO220-3
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 3 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 275µA
Chaje Gate (Qg) (Max) @ Vgs : 206nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 14800pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3
Pake / Ka : TO-220-3