[13799PC Stock]
- Nimewo Pati:
- PHB38N02LT,118
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V 44.7A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PHB38N02LT,118 electronic components. PHB38N02LT,118 can be shipped within 24 hours after order. If you have any demands for PHB38N02LT,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHB38N02LT,118 Atribi pwodwi yo
Nimewo Pati :
PHB38N02LT,118
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 20V 44.7A D2PAK
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
44.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 5V
RD sou (Max) @ Id, Vgs :
16 mOhm @ 25A, 5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15.1nC @ 5V
Vgs (Max) :
12V
Antre kapasite (Ciss) (Max) @ Vds :
800pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
57.6W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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