DMN1008UFDF-13 Pricing (USD) [667962PC Stock]
- 1 pcs$0.05537
- Nimewo Pati:
- DMN1008UFDF-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH30V SC-59.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Tiristors - SCR, Transistors - Pwogramasyon Unijunction, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Transistors - JFETs and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN1008UFDF-13 electronic components. DMN1008UFDF-13 can be shipped within 24 hours after order. If you have any demands for DMN1008UFDF-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN1008UFDF-13 Atribi pwodwi yo
Nimewo Pati :
DMN1008UFDF-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH30V SC-59
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
8 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
23.4nC @ 8V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
995pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
U-DFN2020-6 (Type F)
Pake / Ka :
6-UDFN Exposed Pad
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