IXBX50N360HV Pricing (USD) [1614PC Stock]
- 1 pcs$28.09451
- 10 pcs$26.27328
- 25 pcs$24.29916
- 100 pcs$22.78046
- Nimewo Pati:
- IXBX50N360HV
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 3600V 125A 660W TO-247PLUS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in IXYS IXBX50N360HV electronic components. IXBX50N360HV can be shipped within 24 hours after order. If you have any demands for IXBX50N360HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXBX50N360HV Atribi pwodwi yo
Nimewo Pati :
IXBX50N360HV
Manifakti :
IXYS
Deskripsyon :
IGBT 3600V 125A 660W TO-247PLUS
Seri :
BIMOSFET™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
3600V
Kouran - Pèseptè (Ic) (Max) :
125A
Kouran - Pèseptè batman (Icm) :
420A
Vce (sou) (Max) @ Vge, Ic :
2.9V @ 15V, 50A
Pouvwa - Max :
660W
Oblije chanje enèji :
-
Kalite Antre :
Standard
Gate chaje :
210nC
Td (on / off) @ 25 ° C :
46ns/205ns
Kondisyon egzamen an :
960V, 50A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
1.7µs
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3 Variant
Pake Aparèy Founisè :
TO-247PLUS-HV
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