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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT77N60BC6

Microsemi Corporation - APT77N60BC6

KEY Part #: K6393707

APT77N60BC6 Pricing (USD) [6585PC Stock]

  • 1 pcs$6.88373
  • 10 pcs$6.26014
  • 100 pcs$5.32092
Nimewo Pati:
APT77N60BC6
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 600V 77A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - Zener - Single and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT77N60BC6 electronic components. APT77N60BC6 can be shipped within 24 hours after order. If you have any demands for APT77N60BC6, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT77N60BC6 Atribi pwodwi yo

Nimewo Pati : APT77N60BC6
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 600V 77A TO-247
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 77A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 41 mOhm @ 44.4A, 10V
Vgs (th) (Max) @ Id : 3.6V @ 2.96mA
Chaje Gate (Qg) (Max) @ Vgs : 260nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 13600pF @ 25V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 481W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247 [B]
Pake / Ka : TO-247-3

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