[9594PC Stock]
- Nimewo Pati:
- IRGP4750D-EPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 650V 70A 273W TO247AD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRGP4750D-EPBF electronic components. IRGP4750D-EPBF can be shipped within 24 hours after order. If you have any demands for IRGP4750D-EPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRGP4750D-EPBF Atribi pwodwi yo
Nimewo Pati :
IRGP4750D-EPBF
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 650V 70A 273W TO247AD
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
70A
Kouran - Pèseptè batman (Icm) :
105A
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 35A
Pouvwa - Max :
273W
Oblije chanje enèji :
1.3mJ (on), 500µJ (off)
Kalite Antre :
Standard
Gate chaje :
105nC
Td (on / off) @ 25 ° C :
50ns/105ns
Kondisyon egzamen an :
400V, 35A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
150ns
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247AD
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