[1488PC Stock]
- Nimewo Pati:
- SIE836DF-T1-E3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 200V 18.3A POLARPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIE836DF-T1-E3 electronic components. SIE836DF-T1-E3 can be shipped within 24 hours after order. If you have any demands for SIE836DF-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIE836DF-T1-E3 Atribi pwodwi yo
Nimewo Pati :
SIE836DF-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 200V 18.3A POLARPAK
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
18.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
130 mOhm @ 4.1A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1200pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
5.2W (Ta), 104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
10-PolarPAK® (SH)
Pake / Ka :
10-PolarPAK® (SH)
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