Infineon Technologies - IRFR5505CTRLPBF

KEY Part #: K6408289

[678PC Stock]


    Nimewo Pati:
    IRFR5505CTRLPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET P-CH 55V 18A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Diodes - RF and Diodes - Rèkteur - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRFR5505CTRLPBF electronic components. IRFR5505CTRLPBF can be shipped within 24 hours after order. If you have any demands for IRFR5505CTRLPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFR5505CTRLPBF Atribi pwodwi yo

    Nimewo Pati : IRFR5505CTRLPBF
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET P-CH 55V 18A DPAK
    Seri : HEXFET®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 55V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 110 mOhm @ 9.6A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 32nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 650pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 57W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D-Pak
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63