Nimewo Pati :
SI2369DS-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 30V 7.6A TO-236
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
29 mOhm @ 5.4A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
36nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1295pF @ 15V
Disipasyon Pouvwa (Max) :
1.25W (Ta), 2.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-236
Pake / Ka :
TO-236-3, SC-59, SOT-23-3