Nimewo Pati :
SIHP21N60EF-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 600V 21A TO-220AB
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
176 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
84nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2030pF @ 100V
Disipasyon Pouvwa (Max) :
227W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB