NTR3A30PZT1G Pricing (USD) [383676PC Stock]
- 1 pcs$0.09640
- 3,000 pcs$0.09462
- Nimewo Pati:
- NTR3A30PZT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 20V 3A SOT23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTR3A30PZT1G electronic components. NTR3A30PZT1G can be shipped within 24 hours after order. If you have any demands for NTR3A30PZT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTR3A30PZT1G Atribi pwodwi yo
Nimewo Pati :
NTR3A30PZT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 20V 3A SOT23
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
38 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17.6nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
1651pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
480mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3 (TO-236)
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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