Infineon Technologies - IPN70R360P7SATMA1

KEY Part #: K6420468

IPN70R360P7SATMA1 Pricing (USD) [196861PC Stock]

  • 1 pcs$0.18789
  • 3,000 pcs$0.17103

Nimewo Pati:
IPN70R360P7SATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 700V 12.5A SOT223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPN70R360P7SATMA1 electronic components. IPN70R360P7SATMA1 can be shipped within 24 hours after order. If you have any demands for IPN70R360P7SATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN70R360P7SATMA1 Atribi pwodwi yo

Nimewo Pati : IPN70R360P7SATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 700V 12.5A SOT223
Seri : CoolMOS™ P7
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 360 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs : 16.4nC @ 10V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 517pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 7.2W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-SOT223
Pake / Ka : TO-261-3

Ou ka enterese tou