TJ10S04M3L(T6L1,NQ Pricing (USD) [190859PC Stock]
- 1 pcs$0.21424
- 2,000 pcs$0.21317
- Nimewo Pati:
- TJ10S04M3L(T6L1,NQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 40V 10A DPAK-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Diodes - RF, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TJ10S04M3L(T6L1,NQ electronic components. TJ10S04M3L(T6L1,NQ can be shipped within 24 hours after order. If you have any demands for TJ10S04M3L(T6L1,NQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TJ10S04M3L(T6L1,NQ Atribi pwodwi yo
Nimewo Pati :
TJ10S04M3L(T6L1,NQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 40V 10A DPAK-3
Seri :
U-MOSVI
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
44 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
+10V, -20V
Antre kapasite (Ciss) (Max) @ Vds :
930pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
27W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK+
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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