TSM220NB06LCR RLG Pricing (USD) [343072PC Stock]
- 1 pcs$0.10781
- Nimewo Pati:
- TSM220NB06LCR RLG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET SINGLE N-CHANNEL TRENCH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM220NB06LCR RLG electronic components. TSM220NB06LCR RLG can be shipped within 24 hours after order. If you have any demands for TSM220NB06LCR RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM220NB06LCR RLG Atribi pwodwi yo
Nimewo Pati :
TSM220NB06LCR RLG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET SINGLE N-CHANNEL TRENCH
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Ta), 35A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
22 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1314pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta), 68W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PDFN (5x6)
Pake / Ka :
8-PowerTDFN
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