ON Semiconductor - FDB150N10

KEY Part #: K6393522

FDB150N10 Pricing (USD) [55049PC Stock]

  • 1 pcs$0.71384
  • 800 pcs$0.71029

Nimewo Pati:
FDB150N10
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 100V 57A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Modil pouvwa chofè, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDB150N10 electronic components. FDB150N10 can be shipped within 24 hours after order. If you have any demands for FDB150N10, Please submit a Request for Quotation here or send us an email:
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ISO-28000-2007
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FDB150N10 Atribi pwodwi yo

Nimewo Pati : FDB150N10
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 100V 57A D2PAK
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 57A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 15 mOhm @ 49A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 69nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4760pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 110W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB