Microsemi Corporation - APT40GP90B2DQ2G

KEY Part #: K6424275

APT40GP90B2DQ2G Pricing (USD) [8035PC Stock]

  • 30 pcs$7.66656

Nimewo Pati:
APT40GP90B2DQ2G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 900V 101A 543W TMAX.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT40GP90B2DQ2G Atribi pwodwi yo

Nimewo Pati : APT40GP90B2DQ2G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 900V 101A 543W TMAX
Seri : POWER MOS 7®
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 900V
Kouran - Pèseptè (Ic) (Max) : 101A
Kouran - Pèseptè batman (Icm) : 160A
Vce (sou) (Max) @ Vge, Ic : 3.9V @ 15V, 40A
Pouvwa - Max : 543W
Oblije chanje enèji : 795µJ (off)
Kalite Antre : Standard
Gate chaje : 145nC
Td (on / off) @ 25 ° C : 14ns/90ns
Kondisyon egzamen an : 600V, 40A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3 Variant
Pake Aparèy Founisè : -