IXTP4N60P Pricing (USD) [83500PC Stock]
- 1 pcs$0.54121
- 50 pcs$0.53851
- Nimewo Pati:
- IXTP4N60P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 600V 4A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in IXYS IXTP4N60P electronic components. IXTP4N60P can be shipped within 24 hours after order. If you have any demands for IXTP4N60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP4N60P Atribi pwodwi yo
Nimewo Pati :
IXTP4N60P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 600V 4A TO-220
Seri :
PolarHV™
Estati Pati :
Last Time Buy
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
635pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
89W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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