IXYS - IXTY3N60P

KEY Part #: K6418836

IXTY3N60P Pricing (USD) [79524PC Stock]

  • 1 pcs$0.56828
  • 70 pcs$0.56545

Nimewo Pati:
IXTY3N60P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 600V 3A D-PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in IXYS IXTY3N60P electronic components. IXTY3N60P can be shipped within 24 hours after order. If you have any demands for IXTY3N60P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTY3N60P Atribi pwodwi yo

Nimewo Pati : IXTY3N60P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 600V 3A D-PAK
Seri : PolarHV™
Estati Pati : Last Time Buy
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.9 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5.5V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs : 9.8nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 411pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 70W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252, (D-Pak)
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63