Infineon Technologies - IPA086N10N3GXKSA1

KEY Part #: K6399959

IPA086N10N3GXKSA1 Pricing (USD) [51104PC Stock]

  • 1 pcs$0.76512

Nimewo Pati:
IPA086N10N3GXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 45A TO220-FP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPA086N10N3GXKSA1 electronic components. IPA086N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPA086N10N3GXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA086N10N3GXKSA1 Atribi pwodwi yo

Nimewo Pati : IPA086N10N3GXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 45A TO220-FP
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 45A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 8.6 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 75µA
Chaje Gate (Qg) (Max) @ Vgs : 55nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3980pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 37.5W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-FP
Pake / Ka : TO-220-3 Full Pack

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