[12469PC Stock]
- Nimewo Pati:
- PSMN3R2-30YLC,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V 100A LFPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - JFETs and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN3R2-30YLC,115 electronic components. PSMN3R2-30YLC,115 can be shipped within 24 hours after order. If you have any demands for PSMN3R2-30YLC,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN3R2-30YLC,115 Atribi pwodwi yo
Nimewo Pati :
PSMN3R2-30YLC,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 30V 100A LFPAK
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3.5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
1.95V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
29.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2081pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
92W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LFPAK56, Power-SO8
Pake / Ka :
SC-100, SOT-669
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