[12460PC Stock]
- Nimewo Pati:
- BUK6207-30C,118
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V 90A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Transistors - IGBTs - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. BUK6207-30C,118 electronic components. BUK6207-30C,118 can be shipped within 24 hours after order. If you have any demands for BUK6207-30C,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK6207-30C,118 Atribi pwodwi yo
Nimewo Pati :
BUK6207-30C,118
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 30V 90A DPAK
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5.2 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
54.8nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
3470pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
128W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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