Deskripsyon :
MOSFET 2N-CH 200V 33A I4-PAC
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
33A
RD sou (Max) @ Id, Vgs :
40 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
90nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
3700pF @ 25V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUS i4-PAC™