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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTLUS3A18PZCTAG

ON Semiconductor - NTLUS3A18PZCTAG

KEY Part #: K6402839

[2565PC Stock]

    Nimewo Pati:
    NTLUS3A18PZCTAG
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET P-CH 20V 8.2A UDFN.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTLUS3A18PZCTAG electronic components. NTLUS3A18PZCTAG can be shipped within 24 hours after order. If you have any demands for NTLUS3A18PZCTAG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTLUS3A18PZCTAG Atribi pwodwi yo

    Nimewo Pati : NTLUS3A18PZCTAG
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET P-CH 20V 8.2A UDFN
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.1A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 18 mOhm @ 7A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 28nC @ 4.5V
    Vgs (Max) : ±8V
    Antre kapasite (Ciss) (Max) @ Vds : 2240pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : -
    Operating Tanperati : -
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 6-UDFN (2x2)
    Pake / Ka : 6-UDFN Exposed Pad

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