SQ4153EY-T1_GE3 Pricing (USD) [118801PC Stock]
- 1 pcs$0.31134
- Nimewo Pati:
- SQ4153EY-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CHANNEL 12V 25A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Modil pouvwa chofè and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQ4153EY-T1_GE3 electronic components. SQ4153EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4153EY-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ4153EY-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQ4153EY-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CHANNEL 12V 25A 8SOIC
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
8.32 mOhm @ 14A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
151nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
11000pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
7.1W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOIC
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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