IXYS - IXTP90N055T

KEY Part #: K6408763

[515PC Stock]


    Nimewo Pati:
    IXTP90N055T
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 55V 90A TO-220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
    Avantaj konpetitif:
    We specialize in IXYS IXTP90N055T electronic components. IXTP90N055T can be shipped within 24 hours after order. If you have any demands for IXTP90N055T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTP90N055T Atribi pwodwi yo

    Nimewo Pati : IXTP90N055T
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 55V 90A TO-220
    Seri : TrenchT2™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 55V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 90A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 8.8 mOhm @ 25A, 10V
    Vgs (th) (Max) @ Id : 4V @ 50µA
    Chaje Gate (Qg) (Max) @ Vgs : 61nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2500pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 176W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-220AB
    Pake / Ka : TO-220-3